Dresden, Germany
Internship Explorer
Internship Explorer
As an intern in R&D CMOS Integration, you will work closely with the Technology Architect Group on early‑stage research and exploratory technology development. Your work may include: Ferroelectric HfO₂ Memory (FeFET / FeCAP) Supporting experimental development of HfO₂‑based ferroelectric memory devices Assisting in material‑ and device‑level characterization (polarization loops, retention, endurance behavior) Processing and analyzing electrical, thermal, and reliability datasets Evaluating integration pathways into 22FDX® FDSOI CMOS flows AI‑Accelerated Device & Process Development Assisting in development of AI/ML approaches for device variability analysis, defect classification, or predictive modeling Training lightweight neural models for semiconductor data (Python‑based workflows) Research on AI‑assisted pattern recognition and automated data labeling 22FDX‑Based Quantum Computing Concepts Supporting feasibility assessments of quantum‑relevant device structures in FDSOI Reviewing literature on qubit architectures, cryogenic electronics, and ferroelectric quantum materials Contributing to simulation or modelling tasks (e.g., MATLAB, Python, C‑based tools) General R&D Support Preparing technical documentation, experiment reports, and presentations Participating in cross‑functional meetings with Device Engineering, TCAD, Materials Science and Integration teams
